Datasheet4U Logo Datasheet4U.com

2SD2650 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2174A [2SD2650] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2651 Silicon NPN Epitaxial Transistor Hitachi
2SD2651 Silicon NPN Epitaxial Transistor Renesas
2SD2652 NPN 1.5A 12V Low Frequency Amplifier Transistors Rohm
2SD2653 Transistors Rohm
2SD2653K Transistors Rohm

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SD2658LS NPN Triple Diffused Planar Silicon Transistor
2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor
2SD2624 NPN Transistor
2SD2627 NPN Triple Diffused Planar Silicon Transistor
2SD2627LS NPN Triple Diffused Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SD2650] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 5.