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2SD2658LS - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed.
  • High breakdown voltage (VCBO=1500V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit : mm 2079D [2SD2658LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Parameter Collector-to-Base Voltage Collector-to-Emi.

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Ordering number : ENN7168 2SD2658LS NPN Triple Diffused Planar Silicon Transistor 2SD2658LS Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2079D [2SD2658LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.