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2SD2651 - Silicon NPN Epitaxial Transistor

Key Features

  • High breakdown voltage VCEO = -300V min Outline.

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Datasheet Details

Part number 2SD2651
Manufacturer Renesas
File Size 181.44 KB
Description Silicon NPN Epitaxial Transistor
Datasheet download datasheet 2SD2651 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2651 Silicon NPN Epitaxial High Voltage Amplifier REJ03G0809-0200 (Previous ADE-208-976) Rev.2.00 Aug.10.2005 Features • High breakdown voltage VCEO = -300V min Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 750 150 -55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.datasheet4u.