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Datasheet
RBN40H65T1FPQ-A0
650V - 40A - IGBT Power Switching
R07DS1379EJ0121 Rev.1.21
Oct.14.2021
Features
• Trench gate and thin wafer technology (G8H series) • High speed switching
• Built in fast recovery diode in one package
• Non-specification for short circuit
• Low collector to emitter saturation voltage
• Applications: UPS, Welding, photovoltaic
VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
• Quality grade: Standard
Key Performance
Type RBN40H65T1FPQ-A0
VCES 650 V
IC 40 A
VCE(sat), TC=25°C 1.5 V
IF 30 A
Tj 175 °C
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 123
1. Gate
G
2. Collector 3. Emitter
4. Collector
E
R07DS1379EJ0121 Rev.1.21 Oct.14.
RBN40H65T1FPQ-A0 Datasheet
