RBN40N125S1UFWA
RBN40N125S1UFWA is IGBT manufactured by Renesas.
1250V
- 40A
- IGBT
Features
- Renesas generation 8th Trench IGBT
- Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
- High speed switching
- Short circuit withstands time (10 s min.)
- Applications: UPS, Welding, photovoltaic inverters, Power converter system
- Unsawn wafer Wafer size = 200 mm
- Quality grade: Standard
R07DS1500EJ0120 Rev.1.20
Oct.18th.2024
Key performance
Product name RBN40N125S1UFWA
VCES 1250 V
IC 40 A
Die size 33.28 mm2 (5.20 mm x 6.40 mm)
Package Unsawn wafer
Outline
2 C
G 1
E 3 1. Gate 2. Collector (The back) 3. Emitter
Die
2 3 1 3
Wafer
Mechanical parameter
Chip size Area...
