RBN40N65T1UFWA - IGBT

Product Overview

Renesas

Datasheet Details

Part number	RBN40N65T1UFWA
Manufacturer	Renesas
File Size	138.75 KB
Description	IGBT
Datasheet	RBN40N65T1UFWA Datasheet
Additional preview pages of the RBN40N65T1UFWA datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.You are fully responsible for the incorporat

Features

Renesas generation 8th Trench IGBT.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C).
High speed switching.

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Published: Jan 17, 2025 |