Datasheet4U Logo Datasheet4U.com

RBN40N65T1UFWA - IGBT

General Description

and application examples.

Key Features

  • Renesas generation 8th Trench IGBT.
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C).
  • High speed switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
RBN40N125S1UFWA IGBT
RBN40H125S1FPQ-A0 IGBT
RBN40H65T1FPQ-A0 IGBT
RBN100N180S2HFWA IGBT
RBN150N180S2HFWA IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RBN40N65T1UFWA 650V - 40A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)  High speed switching  Applications: UPS, Welding, photovoltaic inverters, Power converter system  Unsawn wafer Wafer size: 200 mm  Quality grade: Standard Datasheet R07DS1496EJ0120 Rev.1.20 Oct.18th.2024 Key performance Product name RBN40N65T1UFWA VCES 650 V IC 40 A Die size 13.69 mm2 (3.70 mm x 3.70 mm) Package Unsawn wafer Outline 2 C G 1 E 3 1. Gate 2. Collector (The back) 3. Emitter Die 2 1 3 Wafer Mechanical parameter Chip size Area total Thickness Wafer size Passivation frontside Pad metal Backside metal 3.70 x 3.70 13.69 0.075 typ. 193.9 Polyimide AlSi 5.