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RJH1BF6RDPQ-80 Datasheet High Speed Power Switching

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power.

Key Features

  • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 25°C).
  • Gate to emitter voltage rating ±30 V.
  • Pb-free lead plating R07DS0393EJ0100 Rev.1.00 May 16, 2011 Outline.

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RJH1BF6RDPQ-80 Distributor