RJH1BF7RDPQ-80 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High Speed Power Switching Features - - - - Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C) - Gate to emitter voltage rating ±30 V - Pb-free lead plating R07DS0394EJ0100 Rev.1.00 May 16, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) 4 G 1. Gate 2. Collector 3. Emitter 4. Collector 1 2 .DataSheet.net/...