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RJH1DF7RDPQ-80 - High Speed Power Switching

Description

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Features

  • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = 25°C).
  • Gate to emitter voltage rating ±30 V.
  • Pb-free lead plating R07DS0413EJ0100 Rev.1.00 May 18, 2011 Outline.

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Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating R07DS0413EJ0100 Rev.1.00 May 18, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.
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