RJH65S04DPQ-A0 Datasheet | Renesas

Preliminary Datasheet 650V - 50A - IGBT Application: Inverter Features - Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) - Built in fast recovery diode in one package - Trench gate and thin wafer technology - High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) 4 G 1. Gate 2. Collector 3. Emitter 4. Collector 1 2 .DataSheet.net/...