RJH65S04DPQ-A0 Description
Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application:.
RJH65S04DPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology