RJH65T04BDPM-A0 Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

RJH65T04BDPM-A0 650V - 30A - IGBT Power Switching.

Trench gate and thin wafer technology.
Built in fast recovery diode in one package.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C).
Quality grade: Standard Datasheet R07DS1366EJ0200 Rev.2.00 Oct.05.2022.
High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25 C, inductive load).
Operation frequency (20kHz ≤ f ˂ 40kHz).