RJH65T04BDPM-A0 Overview
RJH65T04BDPM-A0 650V - 30A - IGBT Power Switching.
RJH65T04BDPM-A0 Key Features
- Trench gate and thin wafer technology
- Built in fast recovery diode in one package
- Low collector to emitter saturation voltage
- Quality grade: Standard
- High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25 C, inductive load)
- Operation frequency (20kHz ≤ f ˂ 40kHz)