RJH65T04BDPM-A0 Datasheet | Renesas

650V - 30A - IGBT Power Switching Features - Trench gate and thin wafer technology - Built in fast recovery diode in one package - Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) - Quality grade: Standard R07DS1366EJ0200 Rev.2.00 Oct.05.2022 - High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25 C, inductive load) - Operation frequency (20kHz ≤ f ˂ 40kHz) - Applications: Power Factor Correction circuit Key Performance Type RJH65T04BDPM-A0 VCES 650 V IC 30 A VCE(sat), TC=25C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZP-A (Package name:...