RJH65T47DPQ-A0 Description
Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Rev.1.01 Oct 22, 2015.
RJH65T47DPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology (G7H series)
- High speed switching
- Operation frequency (20kHz ≤ f ˂ 100kHz)
- Not guarantee short circuit withstand time