RJH65T47DPQ-A0 Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJH65T47DPQ-A0 650V - 45A - IGBT Application: Power Factor Correction circuit R07DS1291EJ0101 Rev.1.

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology (G7H series).
High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 45 A, Rg = 10 , Ta = 25°CInductive load).
Operation frequency (20kHz ≤ f ˂ 100kHz).
Not guarantee short circuit withstand time Outline.