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RJH65T46DPQ-A0 - IGBT

Description

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Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology (G7H series).
  • High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load).
  • Operation frequency (20kHz ≤ f ˂ 100kHz).
  • Not guarantee short circuit withstand time Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJH65T46DPQ-A0 650V - 40A - IGBT Application: Power Factor Correction circuit R07DS1259EJ0100 Rev.1.00 May 18, 2015 Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology (G7H series)  High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load)  Operation frequency (20kHz ≤ f ˂ 100kHz)  Not guarantee short circuit withstand time Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate G 2. Collector 3. Emitter 4.
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