RJH65T46DPQ-A0 Datasheet | Renesas

Preliminary Datasheet 650V - 40A - IGBT Application: Power Factor Correction circuit R07DS1259EJ0100 Rev.1.00 May 18, 2015 Features - Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C) - Built in fast recovery diode in one package - Trench gate and thin wafer technology (G7H series) - High speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load) - Operation frequency (20kHz ≤ f ˂ 100kHz) - Not guarantee short circuit withstand time Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) 4 123 1. Gate 2. Collector 3. Emitter 4....