RJK6026DPP-E0 Key Features
- Low on-resistance RDS(on) = 2.0 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0614EJ0100 Rev.1.00 Jun 21, 2012
| Part Number | Description |
|---|---|
| RJK6026DPE | Silicon N-Channel MOSFET |
| RJK6024DPE | N-Channel Power MOSFET |
| RJK6025DPD | N-Channel Power MOSFET |
| RJK6025DPH-E0 | MOS FET |
| RJK6002DJE | MOS FET |