RJP30K3DPP-M0 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High Speed Power Switching Features - - - - - Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 1. Gate 2. Collector 3. Emitter 2 3 .DataSheet.co.kr...