RJP60D0DPE Description
Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching.
RJP60D0DPE Key Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
- Gate to emitter voltage rating 30 V
- Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010