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RJP60D0DPM Datasheet N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power.

Key Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C).
  • Gate to emitter voltage rating 30 V.
  • Pb-free lead plating and chip bonding R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Outline.

RJP60D0DPP-M0 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Renesas Technology Logo RJP60D0DPP-M0 Silicon N-Channel IGBT Renesas Technology

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