RJP60D0DPM Description
Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching.
RJP60D0DPM Key Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)
- Gate to emitter voltage rating 30 V
- Pb-free lead plating and chip bonding R07DS0088EJ0200 Rev.2.00 Nov 16, 2010