RQJ0301HGDQS Description
RQJ0301HGDQS Silicon P Channel MOS FET Power Switching.
RQJ0301HGDQS Key Features
- Low on-resistance RDS(on) = 38 m Ω typ (VGS = -10 V, ID = -2.6 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp