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RQJ0301HGDQS Datasheet Silicon P-Channel MOS FET

Manufacturer: Renesas

Overview

RQJ0301HGDQS Silicon P Channel MOS FET Power Switching.

Key Features

  • Low on-resistance RDS(on) = 38 m Ω typ (VGS =.
  • 10 V, ID =.
  • 2.6 A).
  • Low drive current.
  • High speed switching.
  • 4.5 V gate drive Outline.