RQJ0301HGDQS
RQJ0301HGDQS is Silicon P-Channel MOS FET manufactured by Renesas.
Silicon P Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 38 m Ω typ (VGS =
- 10 V, ID =
- 2.6 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
Note: Marking is “HG”.
REJ03G1265-0300 Rev.3.00
Jun 05, 2006
2, 4 D
1. Gate 1 G 2. Drain
3. Source 4. Drain S 3
- UPAK is a trademark of Renesas Technology...
