Datasheet Summary
Preliminary Datasheet
Silicon P Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 54 mΩ typ (VGS =
- 10 V, ID =
- 1.6 A)
- Low drive current
- High speed switching
- 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D 3 G 1 2 S 1 2 1. Source 2. Gate 3. Drain
Note:
Marking is...