RQJ0303PGDQA Overview
Preliminary Datasheet RQJ0303PGDQA Silicon P Channel MOS FET Power Switching.
RQJ0303PGDQA Key Features
- Low on-resistance RDS(on) = 54 mΩ typ (VGS = -10 V, ID = -1.6 A)
- Low drive current
- High speed switching
- 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014