RQJ0302NGDQA Description
RQJ0302NGDQA Silicon P Channel MOS FET Power Switching.
RQJ0302NGDQA Key Features
- Low on-resistance RDS(on) = 138 mΩ typ (VGS = -10 V, ID = -1.1 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- Part: RQJ0302NGDQA
- Manufacturer: Renesas
- Size: 119.12 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RQJ0301HGDQS | Silicon P-Channel MOS FET |
| RQJ0303PGDQA | Silicon P Channel MOS FET |
| RQJ0304DQDQA | Silicon P-Channel MOS FET |
| RQJ0304DQDQS | Silicon P-Channel MOS FET |
| RQJ0305EQDQA | Silicon P-Channel MOS FET |