RQJ0302NGDQA Overview
RQJ0302NGDQA Silicon P Channel MOS FET Power Switching.
RQJ0302NGDQA Key Features
- Low on-resistance RDS(on) = 138 mΩ typ (VGS = -10 V, ID = -1.1 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
RQJ0302NGDQA Datasheet Details
| Part number | RQJ0302NGDQA |
|---|---|
| Datasheet | RQJ0302NGDQA-Renesas.pdf |
| File Size | 119.12 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
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