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UPA2736GR - P-channel MOSFET

General Description

The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Key Features

  • VDSS =.
  • 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 14 A).
  • 4.5 V Gate-drive available.
  • Small and surface mount package (Power SOP8).
  • Pb-free and Halogen free Ordering Information Power SOP8 Part No. μ PA2736GR-E1-AT μ PA2736GR-E2-AT LEAD.

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Full PDF Text Transcription for UPA2736GR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA2736GR. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet μPA2736GR P-channel MOSFET –30 V, –14 A, 7.0 mΩ R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 Description The μ PA2736GR is P-channel MOS Field Effect Transistor desig...

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cription The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (VGS = −10 V, ID = −14 A) • 4.5 V Gate-drive available • Small and surface mount package (Power SOP8) • Pb-free and Halogen free Ordering Information Power SOP8 Part No. μ PA2736GR-E1-AT μ PA2736GR-E2-AT LEAD PLATING Pure Sn PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP.

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