UPA2737GR
Description
The μ PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
- VDSS =
- 30 V (TA = 25°C)
- Low on-state resistance
⎯ RDS(on) = 13 mΩ MAX. (VGS =
- 10 V, ID =
- 11 A)
- 4.5 V Gate-drive available
- Small and surface mount package (Power SOP8)
- Pb-free and Halogen free
Ordering Information
Power SOP8
Part No. μ PA2737GR-E1-AT μ PA2737GR-E2-AT
LEAD PLATING Pure Sn
PACKING Tape 2500 p/reel
Package Power SOP8 0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2
Channel Temperature
Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
Ratings
- 30 m20 m11 m110 1.1
- 55 to +150
Thermal Resistance
Channel to...
