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UPA2764T1A - N-channel MOSFET

Datasheet Summary

Description

The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application.

Features

  • VDSS = 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • 4.5 V Gate-drive available.
  • Thin type surface mount package with heat spreader.
  • Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD.

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Datasheet preview – UPA2764T1A

Datasheet Details

Part number UPA2764T1A
Manufacturer Renesas
File Size 171.94 KB
Description N-channel MOSFET
Datasheet download datasheet UPA2764T1A Datasheet
Additional preview pages of the UPA2764T1A datasheet.

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Full PDF Text Transcription

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Data Sheet μPA2764T1A N-channel MOSFET 30 V , 130 A , 1.10 mΩ Description The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. R07DS0881EJ0102 Rev.1.02 Nov 28, 2012 Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.1 g TYP. μ PA2764T1A-E2-AY∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.
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