Datasheet4U Logo Datasheet4U.com

UPA2764T1A - N-channel MOSFET

General Description

The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application.

Key Features

  • VDSS = 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • 4.5 V Gate-drive available.
  • Thin type surface mount package with heat spreader.
  • Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD.

📥 Download Datasheet

Full PDF Text Transcription for UPA2764T1A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA2764T1A. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet μPA2764T1A N-channel MOSFET 30 V , 130 A , 1.10 mΩ Description The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching app...

View more extracted text
el MOS Field Effect Transistor designed for high current switching application. R07DS0881EJ0102 Rev.1.02 Nov 28, 2012 Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.1 g TYP. μ PA2764T1A-E2-AY∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.

More Datasheets from Renesas

Part Number Description
UPA2761UGR MOS FIELD EFFECT TRANSISTOR
UPA2762UGR MOS FIELD EFFECT TRANSISTOR
UPA2763 MOS FIELD EFFECT TRANSISTOR
UPA2765T1A N-channel MOSFET
UPA2766T1A N-channel MOSFET
UPA2719AGR P-CHANNEL POWER MOS FET
UPA2731UT1A P-CHANNEL POWER MOSFET
UPA2735GR P-channel MOSFET
UPA2736GR P-channel MOSFET
UPA2737GR P-channel MOSFET