UPA2765T1A Description
The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. R07DS0882EJ0102 Rev.1.02 Nov 28, 2012.
UPA2765T1A Key Features
- VDSS = 30 V (TA = 25°C)
- Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
- 4.5 V Gate-drive available
- Thin type surface mount package with heat spreader
- Halogen free