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UPA2765T1A - N-channel MOSFET

General Description

The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application.

Key Features

  • VDSS = 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A).
  • 4.5 V Gate-drive available.
  • Thin type surface mount package with heat spreader.
  • Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD.

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Full PDF Text Transcription for UPA2765T1A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPA2765T1A. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet μPA2765T1A N-channel MOSFET 30 V , 100 A , 1.3 mΩ Description The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching appl...

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l MOS Field Effect Transistor designed for high current switching application. R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.1 g TYP. μ PA2765T1A-E2-AY∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.

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