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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2792AGR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2792AGR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
• Low on-state resistance N-channel RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 5 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 5 A) P-channel RDS(on)1 = 18 mΩ MAX. (VGS = −10 V, ID = −5 A) RDS(on)2 = 26 mΩ MAX. (VGS = −4.5 V, ID = −5 A)
• Low input capacitance N-channel Ciss = 2200 pF TYP. P-channel Ciss = 2200 pF TYP.
• Built-in gate protection diode • Small and surface mount package (Power SOP8)
1.8 MAX.
1.44
0.05 MIN.
PACKAGE DRAWING (Unit: mm)
85
14 5.37 MAX.
N-channel 1 : Source 1 2 : Gate 1 7, 8: Drain 1
P-channel 3 : Source 2 4 : Gate 2 5, 6: Drain 2
6.0 ±0.3 4.
UPA2792AGR Datasheet
