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UPA2794AGR - N- AND P-CHANNEL MOSFET

Datasheet Summary

Description

Transistors designed for Motor Drive application.

Features

  • Low on-state resistance N-channel RDS(on)1 = 25 mΩ MAX. (VGS = 10 V, ID = 2.8 A) RDS(on)2 = 33 mΩ MAX. (VGS = 4.5 V, ID = 2.8 A) P-channel RDS(on)1 = 43 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 2.8 A) RDS(on)2 = 54 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 2.8 A).
  • Low input capacitance N-channel Ciss = 2200 pF TYP. P-channel Ciss = 2200 pF TYP.
  • Built-in gate protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 0.05 MIN. 1.44 PACKAG.

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Datasheet Details

Part number UPA2794AGR
Manufacturer Renesas
File Size 284.49 KB
Description N- AND P-CHANNEL MOSFET
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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2794AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2794AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 25 mΩ MAX. (VGS = 10 V, ID = 2.8 A) RDS(on)2 = 33 mΩ MAX. (VGS = 4.5 V, ID = 2.8 A) P-channel RDS(on)1 = 43 mΩ MAX. (VGS = −10 V, ID = −2.8 A) RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.8 A) • Low input capacitance N-channel Ciss = 2200 pF TYP. P-channel Ciss = 2200 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 0.05 MIN. 1.44 PACKAGE DRAWING (Unit: mm) 85 14 5.37 MAX. N-channel 1 : Source 1 2 : Gate 1 7, 8: Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.
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