UPA2812T1L Datasheet PDF - Renesas P-channel MOSFEF Specs

UPA2812T1L - P-channel MOSFEF

Datasheet Summary

Description

The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Features

VDSS =.
30 V (TA = 25°C).
Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS =.
10 V, ID =.
30 A).
4.5 V Gate-drive available.
Small & thin type surface mount package with heat spreader.
Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2812T1L-E2-AT Note: ∗.
1 Package 8-pin HVSON (3333) typ. 0.028 g 1. Pb-free (This product does not contain Pb.

Datasheet Details

Part number	UPA2812T1L
Manufacturer	Renesas
File Size	188.59 KB
Description	P-channel MOSFEF
Datasheet	UPA2812T1L Datasheet
Additional preview pages of the UPA2812T1L datasheet.

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Full PDF Text Transcription

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Data Sheet μPA2812T1L P-channel MOSFEF –30 V, –30 A, 4.8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0762EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = −10 V, ID = −30 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2812T1L-E2-AT Note: ∗ *1 Package 8-pin HVSON (3333) typ. 0.028 g 1. Pb-free (This product does not contain Pb in external electrode and other parts.

Published: Sep 17, 2013 |