Datasheet4U Logo Datasheet4U.com
Renesas logo

UPA2812T1L Datasheet

Manufacturer: Renesas
UPA2812T1L datasheet preview

Datasheet Details

Part number UPA2812T1L
Datasheet UPA2812T1L_Renesas.pdf
File Size 188.59 KB
Manufacturer Renesas
Description P-channel MOSFEF
UPA2812T1L page 2 UPA2812T1L page 3

UPA2812T1L Overview

The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0762EJ0101 Rev.1.01 May 28, 2013.

UPA2812T1L Key Features

  • VDSS = -30 V (TA = 25°C)
  • Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = -10 V, ID = -30 A)
  • 4.5 V Gate-drive available
  • Small & thin type surface mount package with heat spreader
  • Pb-free and Halogen free
Renesas logo - Manufacturer

More Datasheets from Renesas

See all Renesas datasheets

Part Number Description
UPA2810 MOS FIELD EFFECT TRANSISTOR
UPA2811T1L MOS FIELD EFFECT TRANSISTOR
UPA2813T1L P-channel MOSFEF
UPA2814T1S P-channel MOSFEF
UPA2815T1S P-channel MOSFEF
UPA2816T1S P-channel MOSFEF
UPA2806 MOS FIELD EFFECT TRANSISTOR
UPA2821T1L MOS FIELD EFFECT TRANSISTOR
UPA2826T1S N-channel MOSFET
UPA2200T1M N-CHANNEL MOS FET

UPA2812T1L Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts