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Data Sheet
μPA2816T1S
P-channel MOSFET –30 V, –17 A, 15.5 mΩ
Description
The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0778EJ0101 Rev.1.01 May 28, 2013
Features
• VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free
HWSON-8
Ordering Information
Part No. LEAD PLATING Pure Sn PACKING Tape 5000 p/reel HWSON-8 typ. 0.022 g Package
μPA2816T1S-E2-AT ∗1
Note:
∗
1. Pb-free (This product does not contain Pb in external electrode and other parts.
UPA2816T1S Datasheet
