UPA2816T1S
Overview
The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0778EJ0101 Rev.1.01 May 28, 2013.
- VDSS = -30 V (TA = 25°C)
- Low on-state resistance ⎯ RDS(on) = 15.5 mΩ MAX. (VGS = -10 V, ID = -17 A)
- 4.5 V Gate-drive available
- Small & thin type surface mount package with heat spreader
- Pb-free and Halogen free HWSON-8
