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UPA2814T1S - P-channel MOSFEF

Datasheet Summary

Description

The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Features

  • VDSS =.
  • 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 7.8 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 24 A).
  • 4.5 V Gate-drive available.
  • Small & thin type surface mount package with heat spreader.
  • Pb-free and Halogen free HWSON-8 Ordering Information Part No. Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2814T1S-E2-AT Note: ∗ ∗1 1. Pb-free (This product does not contain Pb in external electrode and.

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Datasheet Details

Part number UPA2814T1S
Manufacturer Renesas
File Size 182.04 KB
Description P-channel MOSFEF
Datasheet download datasheet UPA2814T1S Datasheet
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Full PDF Text Transcription

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Data Sheet μPA2814T1S P-channel MOSFET –30 V, –24 A, 7.8 mΩ Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0776EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.8 mΩ MAX. (VGS = −10 V, ID = −24 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2814T1S-E2-AT Note: ∗ ∗1 1. Pb-free (This product does not contain Pb in external electrode and other parts.
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