UPA2814T1S Description
The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0776EJ0101 Rev.1.01 May 28, 2013.
UPA2814T1S Key Features
- VDSS = -30 V (TA = 25°C)
- Low on-state resistance ⎯ RDS(on) = 7.8 mΩ MAX. (VGS = -10 V, ID = -24 A)
- 4.5 V Gate-drive available
- Small & thin type surface mount package with heat spreader
- Pb-free and Halogen free