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UPA2813T1L - P-channel MOSFEF

Datasheet Summary

Description

The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

R07DS0763EJ0102 Rev.1.02 May.

Features

  • VDSS =.
  • 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 6.2 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 27 A).
  • 4.5 V Gate-drive available.
  • Small & thin type surface mount package with heat spreader.
  • Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2813T1L-E2-AT ∗1 Note: ∗ Package 8-pin HVSON (3333) typ. 0.028 g 1. Pb-free (This product does not contain Pb in e.

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Datasheet Details

Part number UPA2813T1L
Manufacturer Renesas
File Size 207.34 KB
Description P-channel MOSFEF
Datasheet download datasheet UPA2813T1L Datasheet
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Full PDF Text Transcription

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Data Sheet μPA2813T1L P-channel MOSFET –30 V, –27 A, 6.2 mΩ Description The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0763EJ0102 Rev.1.02 May. 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −27 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2813T1L-E2-AT ∗1 Note: ∗ Package 8-pin HVSON (3333) typ. 0.028 g 1. Pb-free (This product does not contain Pb in external electrode and other parts.
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