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Data Sheet
μPA2813T1L
P-channel MOSFET –30 V, –27 A, 6.2 mΩ
Description
The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0763EJ0102 Rev.1.02 May. 28, 2013
Features
• VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −27 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel
μPA2813T1L-E2-AT ∗1
Note:
∗
Package 8-pin HVSON (3333) typ. 0.028 g
1. Pb-free (This product does not contain Pb in external electrode and other parts.