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UPA3753GR - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.

Features

  • Dual chip type.
  • Low on-state resistance ⎯ RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ⎯ RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A).
  • Low gate charge ⎯ QG = 13.4 nC TYP. (VGS = 10 V).
  • Small and surface mount package (Power SOP8) Ordering Information Part No. μPA3753GR-E1-AT.
  • 1 μPA3753GR-E2-AT.
  • 1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Note:.
  • 1. Pb-Free (This product does not contain Pb in the ex.

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Datasheet Details

Part number UPA3753GR
Manufacturer Renesas
File Size 130.58 KB
Description MOS FIELD EFFECT TRANSISTOR
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μPA3753GR MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0758EJ0100 Rev.1.00 May 25, 2012 Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features • Dual chip type • Low on-state resistance ⎯ RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ⎯ RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) • Low gate charge ⎯ QG = 13.4 nC TYP. (VGS = 10 V) • Small and surface mount package (Power SOP8) Ordering Information Part No. μPA3753GR-E1-AT *1 μPA3753GR-E2-AT *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.) “-E1”,”-E2” indicates the unit orientation.
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