RJK0851DPB Description
RJK0851DPB 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Functions High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code:.