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RJK6029DJA Description

Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching.

RJK6029DJA Key Features

  • Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)
  • Low drive current
  • High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010