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RJL5015DPK Description

Datasheet RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching.

RJL5015DPK Key Features

  • Built-in fast recovery diode
  • Low on-resistance RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
  • Low leakage current
  • High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010