ROHM Semiconductor 2SC5824
NPN TRANSISTOR
FEATURES
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. !External dimensions (Units : mm) MPT3 1.0 1.5 0.4 4.0 2.5 0.5 (1) (2) 3.0 0.5 (3) 1.5 0.4 1.6 !APPLICATIONS
NPN Silicon epitaxial planar transistor (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) 0.4 Each lead has same dimensions Abbreviated symbol : UP !Structure Low frequency amplifier High speed switching !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5824 Taping T100 1000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Power dissipation PC Junction temperature Range of storage temperature ∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate Limits...