2SC5824
Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200m V at IC = 2A, IB = 200m A) 3) Strong discharge power for inductive load and capacitance load. 4) plements the 2SA2071. !External dimensions (Units : mm)
MPT3
1.5 0.4
4.0 2.5 0.5
(1)
(2)
(3)
!Applications NPN Silicon epitaxial planar transistor
(1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse)
Each lead has same dimensions
Abbreviated symbol : UP
!Structure Low frequency amplifier High speed switching
!Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SC5824 Taping T100 1000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Power dissipation PC Junction temperature Range of storage temperature
∗1 Pw=100ms ∗2 Each terminal mounted on a remended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic...
