ROHM Semiconductor 2SC5825
NPN TRANSISTOR
Power transistor (60V, 3A) 2SC5825 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 zApplications Low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Type 2SC5825 Package Code Basic ordering unit (pieces) Taping TL 2500 zDimensions (Unit : mm) CPT3 (SC-63) <SOT-428> (1) Base (2) Collector (3) Emitter Each lead has same dimensions Abbreviated symbol : C5825 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current Continuous Pulsed IC ICP Power dissipation PC Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land ∗3 Tc=25°C Tj Tstg Limits 60 60 6 3 6 1.0 10.0 150 −55 to 150 Unit V V V A A ∗1 W ∗2 W ∗3 °C °C ○c 2009 ROHM Co., Ltd.