2SC5825
Power transistor (60V, 3A)
2SC5825 z Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200m V at IC = 2A, IB = 0.2m A)
3) Strong discharge power for inductive load and capacitance load.
4) plements the 2SA2073 z Applications Low frequency amplifier High speed switching z Structure NPN Silicon epitaxial planar transistor z Packaging specifications
Type 2SC5825
Package Code Basic ordering unit (pieces)
Taping TL 2500 z Dimensions (Unit : mm)
CPT3
(SC-63) <SOT-428>
(1) Base (2) Collector (3) Emitter
Each lead has same dimensions Abbreviated symbol : C5825 z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
Continuous Pulsed
IC ICP
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a remended land ∗3 Tc=25°C
Tj Tstg
Limits 60 60 6 3 6 1.0 10.0 150
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