2SC5826
Transistors
Power transistor (60V, 3A)
2SC5826 z Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200m V at IC = 2A, IB = 0.2m A) 3) Strong discharge power for inductive load and capacitance load. 4) plements the 2SA2073 z External dimensions (Unit : mm)
6.8 2.5
0.65Max.
0.5 2.54 2.54
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
Symbol : C5826 z Applications Low frequency amplifier High speed switching z Structure NPN Silicon epitaxial planar transistor z Packaging specifications
Package
Type
Taping
TV2 2500
Code Basic ordering unit (pieces)
2SC5826 .. z Absolute maximum ratings (Ta=25°C)
Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 3 6 1.0 150
- 55 to 150 Unit V V V A A W °C °C
∗
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
∗Pw=100ms
Pulsed
Tj
Tstg...
