ROHM Semiconductor 2SD1862
Medium Power Transistor
| Part No. | 2SD1862 |
|---|---|
| Datasheet | 2SD1862 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240●Structure Epitaxial planar type NPN silicon transistor 0.5±0.1
●Dimensions (Unit : mm) 2SD1766 4.5+−00..21 1.6±0.1 1.5 +0.2 −0.1 2SD1758 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 5.5+−00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 4.0±0.3 2.5+−00..21 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4 +0.1 −0.05 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2SD1862 6.8±0.2 2.5±0.2 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base ∗ Denotes hFE
●Absolute maximum ratings (Ta=25
