2SD1863 - Power Transistor

ROHM

Key Features

1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.
Structure Epitaxial planer type NPN silicon transistor.
Dimensions (Unit : mm) 2SD1898 4.5+.
00..21 1.6±0.1 1.5.
+00..12 0.5±0.1 4.0±0.3 2.5+.
00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+.
00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4.
+00..015 Abbreviated symb.

2SD1863 power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1863
Manufacturer	ROHM
File Size	161.19 KB
Description	Power Transistor
Datasheet	2SD1863 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SD1861	Power transistor
2SD1862	Medium Power Transistor
2SD1864	Power Transistor
2SD1865	MEDIUM POWER TRANSISTOR
2SD1866	Medium Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+−00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 Abbreviated symbol : DF 2SD1768S 2.3+−00..21 0.5±0.1 3±0.2 4±0.2 (1) Base (2) Collector (3) Emitter 2±0.2 3Min. 5.5+−00..31 1.5±0.3 0.9 (15Min.) 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) 0.55±0.1 1.0±0.2 ROHM : CPT3 EIAJ : SC-63 2SD1863 6.8±0.