ROHM Semiconductor 2SD1863
Power Transistor
| Part No. | 2SD1863 |
|---|---|
| Datasheet | 2SD1863 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181●Structure Epitaxial planer type NPN silicon transistor
●Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+−00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 Abbreviated symbol : DF 2SD1768S 2.3+−00..21 0.5±0.1 3±0.2 4±0.2 (1) Base (2) Collector (3) Emitter 2±0.2 3Min. 5.5+−00..31 1.5±0.3 0.9 (15Min.) 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) 0.55±0.1 1.0±0.2 ROHM : CPT3 EIAJ : SC-63 2SD1863 6.8±0.2 (1) Base (2) Collector (3) Emitter 2.5±0.2 0.45+−00..1055 2.5+−00..41 5 0.5 0.45−+00..0155 (1) (2) (3) Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base ○c 2009 ROHM Co., Ltd.
