ROHM Semiconductor 2SD1866
Medium Power Transistor
2SD1866 Specifications
- Max Collector Current : 1.5A
- Collector Emitter Voltage : 70V
- Max Power Dissipation : 1W
Source:
Octopart
| Part No. | 2SD1866 |
|---|---|
| Datasheet | 2SD1866 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 2SD2212 1.5 0.4 4.0 1.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD2212 2SD2143 2SD1866 2SD2397 Symbol VCBO VCES VEBO IC Limits 60±10 60±10 6 2 3 2 10 1 20 150 -55~+150 Unit V V V A(DC) A(Pulse) 1 W 2 W(Tc=25˚C) W 3 W(Tc=25˚C) ˚C ˚C 0.75 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 (3) (2) (1) 2.3 0.9 2SD2143 2.3 5.5 1.5 1.0 0.5 0.5 1.5 2.5 9.5 2.3 PC Tj Tstg * * * 0.9 0.65 0.8Min. 5.1 6.5 1.5 C0.5 ROHM : CPT3 EIAJ : SC-63 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) Single pulse Pw=100ms *1 When mounted on a 40×40×0.7mm ceramic board. *2 3 Printed circuit board 1.7mm thick, collector plating 1cm * 2 or larger.