2SD1867 Datasheet PDF

Power Transistor (100V, 2A) 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. zinner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage Emitter-base voltage VCEO VEBO 100 6 V V Collector current IC 2 3 ∗1 Collector power dissipation 2SD1980 2SD1867 PC 1 10 1 ∗2 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=100ms ∗2 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger. A(DC) A(Pulse) W W(Tc=25°C) W °C °C zPackaging specifications and hFE Type 2SD1980 2SD1867 Package hFE Marking CPT3 1k to 10k − ATV 1k to 10k − Code TL TV2 Basic ordering unit (pieces) ∗ Denotes hFE 2500 2500 zDimensions (Unit : mm) 2SD1980 6.5 5.1 2.3 0.5 0.9 5.5 1.5 1.5 9.5 0.8Min. 2.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 ROHM : CPT3 EIAJ : SC-63 2SD1867 6.8 0.5 1.0 (1) Base (2) Collector (3) Emitter 2.5 0.9 4.4 1.0 14.5 0.65Max. (1) (2) (3) 2.