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DAN217W
Switching Diode (High speed switching)
●Outline
VRM 80 V IFM 300 mA Io 100 mA IFSM 4000 mA
●Features High reliability Small mold type High Speed switching
●Inner Circuit
Data sheet
●Application High speed switching
●Structure Epitaxial planar
●Absolute Maximum Ratings (Ta = 25ºC)
Parameter
Symbol
Reverse voltage
VR
Repetitive peak reverse voltage
VRM
Average rectified forward current
Io
Forward current
IFM
Peak forward surge current
IFSM
Power dissipation *
PD
Junction temperature Storage temperature
Tj Tstg
*2 elements total
●Characteristics (Ta = 25ºC)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals *
Ct
Reverse recoverytime
trr
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DAN217W Datasheet
