ROHM Semiconductor DAN217W
Switching Diode
| Part No. | DAN217W |
|---|---|
| Datasheet | DAN217W Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
High reliability Small mold type High Speed switching●Inner Circuit Data sheet
●Application High speed switching
●Structure Epitaxial planar
●
ABSOLUTE MAXIMUM RATINGS
(Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Power dissipation * PD Junction temperature Storage temperature Tj Tstg *2 elements total●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals * Ct Reverse recoverytime trr ※Caution：static electricity *Capacitance：b/w 1pin and 2pin
●Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 3000 Taping Code TL Marking AW Conditions - t=1μs - Limits 80 80 100 300 4000 150 150 -55 ～ 150 Unit V V mA mA mA mW ℃ ℃ Conditions IF=100mA VR=70V VR=6.0V f=1.0MHz VR=6.0V IF=5.0mA RL=50Ω Min. - Value per element Typ. Max. Unit - 1.2 V - 0.1 μA - 3.5 pF - 4.0 ns © 2016 ROHMCo., Ltd.All rights reserved.
