EMF7
EMF7 is Power management manufactured by ROHM.
Features
1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
(4) (5) (6)
(3) (2) (1)
1.2 1.6
!Structure Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has same dimensions
!Equivalent circuits
(3) (2) (1)
Abbreviated symbol F7
DTr2 R2
(4)
R1
Tr1
(5) R1=2.2kΩ R2=2.2kΩ
(6)
!Packaging specifications
Type Package Marking Code Basic ordering unit(pieces) EMF7 EMT6 F7 T2R 8000
0.5 0.5 1.0 1.6
1/4
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO 15 VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg
- 55~+150 Range of storage temperature
∗1 Single pulse PW=1ms ∗2 120m W per element must not be exceeded. Each terminal mounted on a remended land.
Unit V V V m A A m W °C °C
∗1 ∗2
DTr2
Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC
- 10~+20 VIN 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg
- 55~+150 Unit V V m A m A m W °C °C
∗1 ∗2
∗1 Characteristics of built-in transistor. ∗2 120m W per element must not be exceeded. Each terminal mounted on a remended land.
!Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) h FE f T Cob Min. 12 15 6
- -...
