EMF8 Datasheet | ROHM

.. Transistors Power management (dual transistors) 2SC5585 and DTC144EE are housed independently in a EMT6 package. z Application Power management circuit z External dimensions (Unit : mm) z Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. (4) (5) (6) (3) (2) (1) 1.2 1.6 0.13 z Structure Silicon epitaxial planar transistor ROHM : EMT6 Each lead has same dimensions z Equivalent circuits (3) (2) (1) Abbreviated symbol : F8 DTr2 R2 (4) R1 Tr1 (5) R1=47kΩ R2=47kΩ (6) z Package, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF8 EMT6 F8 T2R 8000 0.5 0.5 1.0 1.6 Rev.A 1/4 Transistors z Absolute maximum ratings (Ta=25°C) Tr1 Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg - 55 to +150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ∗1 Single pulse PW=1ms ∗2 120m W per element must not be exceeded. Each terminal mounted on a remended land. Unit V V V m A A m W °C °C ∗1 ∗2 DTr2 Parameter Symbol Limits VCC 50 Supply voltage VIN - 10 to +40 Input voltage IC 100 Collector current IO 30 Output current PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg - 55 to +150 Range of storage temperature ∗1 Characteristics of built-in transistor. ∗2 120m W per element must not be exceeded. Each terminal mounted on a remended land. Unit V V m A m A m W °C °C ∗1 ∗2 z Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) h FE f T Cob Min. 12 15...