Datasheet4U Logo Datasheet4U.com

RB530VM-30FH - Schottky Barrier Diode

Key Features

  • mall mold type. (UMD2) 2)High reliability.
  • Construction Silicon epitaxial planer 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) UMD2.
  • Structure.
  • Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak.

📥 Download Datasheet

Datasheet Details

Part number RB530VM-30FH
Manufacturer ROHM
File Size 568.45 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB530VM-30FH Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RB53 Axial Lead Precision Wirewound Resistors TT electronics
RB500V 100mA Surface Mount Small Signal Diodes CITC
RB500V-40 SCHOTTKY BARRIER DIODE JCET
RB500V-40 Schottky Barrier Diode GME
RB500V-40 Low VF SMD Schottky Barrier Diode Taiwan Semiconductor

Other Datasheets by ROHM

Part Number Description
RB530VM-30 Schottky Barrier Diode
RB530CM-40 Schottky Barrier Diode
RB530CM-60 Schottky Barrier Diode
RB530S-30 Schottky Barrier Diode
RB530S-30FH Schottky barrier diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Diode RB530VM-30FH Applications General rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Datasheet AEC-Q101 Qualified Land size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability Construction Silicon epitaxial planer 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) UMD2 Structure Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz1cyc) Junction temperature IFSM Tj Storage temperature Tstg 1.