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RB715W - Schottky barrier diode

Key Features

  • 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planar.
  • Dimensions (Unit : mm) 1.6± 0.2 0.3±0.1 　　　 0.05 (3) 0.15±0.05.
  • Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 0.8±0.1 1. 6±0. 2 0.1Min 0.7 0.7 1.3 0 .2± 0.1 　　- 0.05 (2) 0.5 0.5 1.0±0.1 (1) 0～0.1 0.55±0.1 0.7±0.1 ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) 0.6 EMD3.
  • Structure 0.6.
  • Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05.

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Datasheet Details

Part number RB715W
Manufacturer ROHM
File Size 0.96 MB
Description Schottky barrier diode
Datasheet download datasheet RB715W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Shottky barrier diode RB715W Applications Low current rectification Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planar Dimensions (Unit : mm) 1.6± 0.2 0.3±0.1 　　　 0.05 (3) 0.15±0.05 Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 0.8±0.1 1. 6±0. 2 0.1Min 0.7 0.7 1.3 0 .2± 0.1 　　- 0.05 (2) 0.5 0.5 1.0±0.1 (1) 0～0.1 0.55±0.1 0.7±0.1 ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) 0.6 EMD3 Structure 0.6 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φφ1.15.55±00..1 　　　　　00 0.3±0.1 1.75±0.1 8.0±0.2 1.8±0.2 5.5±0.2 3.5±0.05 0～0.1 1.8±0.