ROHM Semiconductor RB715W
Schottky barrier diode
| Part No. | RB715W |
|---|---|
| Datasheet | RB715W Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
APPLICATIONS
Low current rectification●
FEATURES
1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability.●Construction Silicon epitaxial planar
●Dimensions (Unit : mm) 1.6± 0.2 0.3±0.1 0.05 (3) 0.15±0.05
●Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 0.8±0.1 1. 6±0. 2 0.1Min 0.7 0.7 1.3 0 .2± 0.1 - 0.05 (2) 0.5 0.5 1.0±0.1 (1) 0～0.1 0.55±0.1 0.7±0.1 ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) 0.6 EMD3
●Structure 0.6
●Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φφ1.15.55±00..1 00 0.3±0.1 1.75±0.1 8.0±0.2 1.8±0.2 5.5±0.2 3.5±0.05 0～0.1 1.8±0.1
●Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz●1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg φ0.5±0.1 Limits 40 40 30 200 125 40 to 125 Unit V V mA mA °C °C 0.9±0.2
●Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min.
