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RP1E100RP - 4V Drive Pch MOSFET

Features

  • 1) Low On-resistance. 2) High power package. 3) 4V drive.
  • Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3).

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Datasheet Details

Part number RP1E100RP
Manufacturer ROHM
File Size 188.40 KB
Description 4V Drive Pch MOSFET
Datasheet download datasheet RP1E100RP Datasheet

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4V Drive Pch MOSFET RP1E100RP  Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package. 3) 4V drive.  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E100RP Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 30 20 10 40 1.6 40 2.0 Channel temperature Tch 150 Range of storage temperature Tstg 55 to +150 Unit V V A A A A W C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
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