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4V Drive Pch MOSFET
RP1E050RP
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
MPT6
Features 1) Low On-resistance. 2) High power package. 3) 4V drive.
(6)
(5)
(4)
(1)
(2)
(3)
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E050RP Taping TR 1000 ○
Inner circuit
(6) (5) (4)
∗2
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.