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RP1E090XN - N-Channel MOSFET

Features

  • 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
  • Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3).

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Datasheet Details

Part number RP1E090XN
Manufacturer ROHM
File Size 427.00 KB
Description N-Channel MOSFET
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Data Sheet 4V Drive Nch MOSFET RP1E090XN  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E090XN Taping TR 1000   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS 30 VGSS 20 ID 9 IDP *1 36 IS 1.6 ISP *1 36 PD *2 2.0 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
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