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Data Sheet
4V Drive Nch MOSFET
RP1E070XN
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6 (Single)
(6) (5) (4)
(1) (2) (3)
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RP1E070XN
Taping TR 1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 7
IDP *1
18
IS 1.6
ISP *1
18
PD *2
2.0
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.